PART |
Description |
Maker |
HY5PS561621F-C5 |
DDR2 SDRAM - 256Mb
|
Hynix Semiconductor
|
HY5PS561621BFPC4 HY5PS561621BFPE3 HY5PS561621BFPS5 |
256Mb DDR2 SDRAM
|
Hynix Semiconductor
|
H5PS2562GFRG7C H5PS2562GFRS5C H5PS2562GFRS5I H5PS2 |
256Mb DDR2 SDRAM
|
Hynix Semiconductor
|
K4T56163QI K4T56163QI-ZCLCC K4T56163QI-ZCLD5 K4T56 |
256Mb I-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
EBE25RC8AAFA-4C-E EBE25RC8AAFA-5C-E EBE25RC8AAFA-4 |
256MB Registered DDR2 SDRAM DIMM 256MB Registered DDR2 SDRAM DIMM
|
Elpida Memory
|
K5D5657DCM-F015 K5D5657DCM-F0CL |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
SAMSUNG[Samsung semiconductor] Samsung Electronics
|
W3H64M72E-667ES W3H64M72E-667ESI W3H64M72E-400ESI |
64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package 64米72 DDR2 SDRAM08 PBGA封装多芯片封
|
Atmel, Corp. Fujitsu, Ltd.
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYMP325S64MP8 HYMP112S648 HYMP112S64P8 |
DDR2 SDRAM - SO DIMM 2GB DDR2 SDRAM - SO DIMM 1GB
|
Hynix Semiconductor
|
K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|